蒋华平，男，1982年生，博士，“百人计划”特聘研究员，博士生导师。从事电力电子器件及其应用技术研究18年，其中碳化硅电力电子10余年：中国中车2年、英国丹尼克斯（Dynex Semiconductor Ltd）4年、英国华威大学（University of Warwick）2年、重庆大学5年。兼备学术研究和产品研发，贯通电力电子和功率芯片。重庆大学教学与科研期间，着力于高速发展的国际前沿领域——碳化硅电力电子，切合国家双碳和新能源战略。打造《功率微电子学》等课程，破除芯片与电路间壁垒，将芯片、封装、测试和应用融为一体。所培养的复合型人才，多人在中国华为、中电集团、英国华威大学、怀柔国家实验室等国内外一流企事业单位居于核心岗位，为中国乃至世界碳化硅电力电子的发展做出突破性贡献。

在IEEE Trans. Power Electronics、IEEE Electron Device Letter、IEEE Trans. Electron Devices等顶级期刊和ISPSD等顶级会议上，发表学术论文共计70余篇，其中期刊论文40余篇、会议论文30余篇。中国发明专利30余项，其中已授权24项，英国发明专利2项。牵头制定第三代半导体联盟团体标准1项，参与制定美国JEDEC标准1项。

研究成果被德国Infineon公司在其国际专利、学术论文和JEDEC标准中引用不少于7次。在碳化硅MOSFET阈值稳定性方面系统且深入的研究，最早于国际顶级期刊IEEE Electron Device Letter上报道，得到德国Infineon、美国泰克和中国华为等国际一流公司高度认可和/或合作邀请。提出非对称MMC子模块，首次于国际顶级期刊IEEE Trans. Power Electronics报道，获得南方电网高度认可。

碳化硅电力电子芯片是国家双碳和新能源战略的重要支点之一，属于典型卡脖子技术，是科技战主战场。相比于传统基于 IGBT 电力电子芯片，碳化硅电力电子芯片及其器件在小型、轻量和高效等方面具有碾压性优势，属于未来 30 年国际热门方向，急缺高层次、综合性人才。代表性应用领域是电动汽车（含充电桩）、光伏发电、直流和柔性直流输电。碳化硅电力电子方向横跨芯片、封装、测试和电路，毕业后知识面广而深，无论是从事电力电子装备开发还是功率半导体芯片设计制造，都具有技术和产业人才紧缺、迫切的需要。

欢迎电气工程、集成电路和物理学等学科/方向的学生报考博士或硕士研究生。

近3年代表性论文：

[1] H. Mao, L. Ran, H. Chen, X. Zhou and H. Jiang*, "Avalanche Capability Degradation of the Parallel-Connected SiC MOSFETs," in Microelectronics Reliability, vol. 142, Mar. 2023, doi: 10.1016/j.microrel.2023.114926.

[2] J. Wei, H. Jiang*, N. Xiao, Z. Wu, L. Wang and L. Ran, "Multiple Phase Change Materials Integrated into Power Module for Normal and High Current Reliability Enhancement," in IEEE Transactions On Device and Materials Reliability, Jan. 2023, doi: 10.1109/TDMR.2023.3236339.

[3] H. Mao, H. Jiang*, L. Ran, J. Hu, G. Qiu, J. Wei, H. Chen, X. Zhong, N. Xiao, L. Wang and M. Yang, "An Asymmetrical Power Module Design for Modular Multilevel Converter With Unidirectional Power Flow," in IEEE Transactions on Power Electronics, vol. 38, no. 1, pp. 1092-1103, Jan. 2023.

[4] L. Tang, H. Jiang*, X. Zhong, G. Qiu, H. Mao, X. Jiang, X. Qi, C. Du, Q. Peng, L. Liu and L. Ran, "Investigation Into the Third Quadrant Characteristics of Silicon Carbide MOSFET," in IEEE Transactions on Power Electronics, vol. 38, no. 1, pp. 1155-1165, Jan. 2023.

[5] H. Jiang*, X. Qi, G. Qiu, X. Zhong, L. Tang, H. Mao, Z. Wu, H. Chen and L. Ran, "A Physical Explanation of Threshold Voltage Drift of SiC MOSFET Induced by Gate Switching," in IEEE Transactions on Power Electronics, vol. 37, no. 8, pp. 8830-8834, Aug. 2022.

[6] X. Zhong, H. Jiang*, L. Tang, X. Qi, P. Jiang and L. Ran, "Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs," in IEEE Transactions on Electron Devices, vol. 69, no. 6, pp. 3328-3333, June 2022.

[7] X. Zhong, H. Jiang*, G. Qiu, L. Tang, H. Mao, C. Xu, X. Jiang, J. Hu, X. Qi and L. Ran, "Bias Temperature Instability of Silicon Carbide Power MOSFET Under AC Gate Stresses," in IEEE Transactions on Power Electronics, vol. 37, no. 2, pp. 1998-2008, Feb. 2022.

[8] H. Mao, G. Qiu, X. Jiang, H. Jiang*, X. Zhong, L. Tang, Y. Zhang, L. Ran and Y. Wu, "Investigation on the Degradations of Parallel-Connected 4H-SiC MOSFETs Under Repetitive UIS Stresses," in IEEE Transactions on Electron Devices, vol. 69, no. 2, pp. 650-657, Feb. 2022.

[9] G. Qiu, L. Ran, H. Feng, H. Jiang*, T. Long, A. J. Forsyth, W. Shao and X. Hou, "A Fluxgate-Based Current Sensor for DC Bias Elimination in a Dual Active Bridge Converter," in IEEE Transactions on Power Electronics, vol. 37, no. 3, pp. 3233-3246, March 2022.

[10] Z. Wu, H. Jiang*, Z. Zheng, X. Qi, H. Mao, L. Liu and L. Ran, "Dynamic dv/dt Control Strategy of SiC MOSFET for Switching Loss Reduction in the Operational Power Range," in IEEE Transactions on Power Electronics, vol. 37, no. 6, pp. 6237-6241, June 2022.

[11] X. Jiang, H. Jiang*, X. Zhong, H. Mao, Z. Wu, L. Tang, H. Chen, J. Cheng and L. Ran, "Impact of Gate Resistance on Improving the Dynamic Overcurrent Stress of the Si/SiC Hybrid Switch," in IEEE Transactions on Power Electronics, vol. 37, no. 11, pp. 13319-13331, Nov. 2022.

[12] L. Tang, H. Jiang*, J. Wei, Q. Hu, X. Zhong and X. Qi, “A comparative study of SiC MOSFETs with and without integrated SBD,” in Microelectronics Journal, vol. 128, pp. 0026-2692, Oct. 2022.

[13] H. Ren*, L. Ran, X. Liu, L. Liu, S. Djurović, H. Jiang*, M. Barnes and P. A. Mawby, "Quasi-Distributed Temperature Detection of Press-Pack IGBT Power Module Using FBG Sensing," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 10, no. 5, pp. 4981-4992, Oct. 2022.

[14] H. Jiang*, J. Wei, X. Fang, H. Ren, W. Shao and L. Ran, "A ᐃTj Reduced Power Module With Inbuilt Phase Change Material for Reliability Enhancement," in IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4557-4564, Sept. 2021.

[15] H. Jiang*, X. Zhong, G. Qiu, L. Tang, X. Qi and L. Ran, "Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET," in IEEE Electron Device Letters, vol. 41, no. 9, pp. 1284-1287, Sept. 2020.